dm nh6021s ps document number: ds 37685 rev. 2 - 2 1 of 7 www.diodes.com june 2016 ? diodes incorporated dm nh6021s ps 60v 175c n - channel enhancement mode mosfet p ower di 5060 - 8 product summary b v dss r ds(on) max i d max t c = + 25c 60v 23 m? @ v gs = 10 v 5 5 a 28 m? @ v gs = 4.5 v 48 a description this mosfet is designed to minimize the on - state resistance (r ds(on) ) , yet maintain superior switching performance, making it ideal for high - efficiency power management applications. applications ? driving s olenoids ? driving r elays ? power m anagement f unctions features ? rated to +175c C ideal for high ambient temperature environments ? 100% unclamped inductive switching C ensures more reliable and robust end application ? high conversion efficiency ? low r ds(on) C minimizes on - state losses ? low input capacitance ? fast switching speed ? lead - free finish; rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (n ? qualified to aec - q101 standards for high reliability ? an automotive - compliant part is available under separate data sheet ( DMNH6021SPSq ) mechanical data ? case: p ower di ? 5060 - 8 ? c ase material: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal finish matte tin a nnealed over copper leadframe. solderable per mil - std - 202, method 208 ? weight: 0. 097 grams ( a pproximate) ordering information (note 4 ) part number case packaging dm nh 6 0 2 1 s ps - 13 powerdi5060 - 8 2 , 500 / tape & reel note s: 1 . eu directive 2002/95/ec (ro hs) & 2011/65/eu (rohs 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3 . halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging det ails, go to our website at http: //www.diodes.com/prod ucts/packages.html . marking information bottom view t op view pin configuration top view internal schematic p ower di5060 - 8 pin1 s d d g d d s s = manufacturers marking p ower di is a registered trademark of diodes incorporated. green
dm nh6021s ps document number: ds 37685 rev. 2 - 2 2 of 7 www.diodes.com june 2016 ? diodes incorporated dm nh6021s ps maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit s drain - source voltage v dss 6 0 v gate - source voltage v gss 20 v continuous drain current , v gs = 10 v (note 7 ) t c = + 25 c t c = + 100 c i d 55 39 a maximum continu ous body diode f orward current (note 7 ) i s 55 a pulsed drain current ( 10 s pulse, duty cycle = 1% ) i dm 88 a avalanche current , l = 0. 1m h (note 8 ) i a s 3 5 a avalanche energy , l = 0. 1m h (note 8 ) e a s 6 4 mj thermal characteristics characteristic symbol value units total power dissipation (note 5 ) t a = +25c p d 1.6 w thermal resistance, junction to ambient (note 5 ) s teady state r ja 96 c/w total power dissipation (note 6 ) t a = +25c p d 3.0 w thermal resistance, junction to ambient (note 6 ) s teady state r ja 50 c/w total power dissipation (note 7 ) t c = + 25 c p d 53 w thermal resistance, junction to case (note 7 ) r j c 1.5 c/w operating and storage temperature range t j, t stg - 55 to + 175 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 9 ) drain - source breakdown voltage bv dss 60 gs = 0v , i d = 250a dss ds = 60 v, v gs = 0v gate - source leakage i gss gs = 20 v, v ds = 0v on characteristics (note 9 ) gate threshold voltage v gs(th) 1 ds = v gs , i d = 250 a ds (on) m? gs = 10 v, i d = 12 a gs = 4.5 v, i d = 12 a diode forward voltage v sd gs = 0v, i s = 2 0 a dynamic characteristics (note 10 ) input capacitance c iss ds = 30 v, v gs = 0v , f = 1 mhz output capacitance c oss rss g ? ds = 0 v, v gs = 0v , f = 1 mhz total gate charge ( v gs = 4.5 v ) q g ds = 30 v, i d = 20 a tot al gate charge ( v gs = 10 v ) q g gs gd d(on) dd = 30 v, v gs = 10 v, i d = 10 a , r g = 4.7 ? r d(off) f rr f = 20 a, di/dt = 1 0 0a/s rr notes: 5 . device mounted on fr - 4 pc board, with minimum recommended pad layout, single sided. 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with thermal bias to bottom layer 1 - inch square copper plate. 7 . thermal re sistance from junction to soldering point (on the exposed dr ain pad). 8 . i as and e as rating are based on low frequency and duty cycles to keep t j = + 25 c . 9 . short duration pulse test used to minimize self - heating effect. 1 0 . guaranteed by design. not subject to product testing.
dm nh6021s ps document number: ds 37685 rev. 2 - 2 3 of 7 www.diodes.com june 2016 ? diodes incorporated dm nh6021s ps v , gate - source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 4.5 v = 10v ds t = 150c a t = 125c a t = 85c a t = 25c a t = - 55c a t = 175c a i d , drain current (a) i , drain curren t (a) d figure 5 typical on - resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0 5 10 15 20 25 30 t = - 55c a t = 25c a t = 85c a t = 125c a t = 175c a v = 10v gs t = 150c a r ds(on) , drain - source on - resistance ( ? v gs = 10v v , drain-source voltage (v) figure 1 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d 0.0 5.0 v = 3.0v gs v = 3.5v gs v = 6.0v gs v = 10 gs v = 4.0v gs 10.0 15.0 20.0 25.0 30.0 0 1 2 3 4 5 v = 4.5v gs v = 5.0v gs i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 12 14 16 18 20 22 24 0 5 10 15 20 25 30 v = 4.5v gs v = 10v gs v , gate-source voltage (v) gs figure 4 typical drain-source on-resistance vs. gate-source voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 10 15 20 25 30 35 40 45 50 2 4 6 8 10 12 14 16 18 20 i = 12a d i = 15a d t , junction temperature ( c) figure 6 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 -50 -25 0 25 50 75 100 125 150 175 v = 4.5v i = 12a gs d v = v i = 15a gs d 10
dm nh6021s ps document number: ds 37685 rev. 2 - 2 4 of 7 www.diodes.com june 2016 ? diodes incorporated dm nh6021s ps i s , source current (a) 175 c 1 50 c 1 25 c 85 c 25 c - 55 c t , junction temperature (c) figure 8 gate threshold variation vs. junction temperature j ?? v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 - 50 - 25 0 25 50 75 100 125 150 175 i = 1ma d i = 250a d v gs(th) , gate threshold voltage (v) t j , junction temperature ( o c) t , junction temperature ( c) figure 7 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0.045 0.05 -50 -25 0 25 50 75 100 125 150 175 v = 4.5v i = 12a gs d v = v i = 15a gs d 10 v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s t = 125c a 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 t = 150c a t = 175c a t = -55c a t = 25c a t = 85c a q (nc) g , total gate charge figure 11 gate charge v g a t e t h r e s h o l d v o l t a g e ( v ) g s 0 2 4 6 8 10 0 4 8 12 16 20 v = 30v i = a ds d 20 t , junction temperature (c) j figure 10 avalanche energy e , a v a l a n c h e e n e r g y ( m j ) a s 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 25 50 75 100 125 150 175 i = 10a d i = 15a d i = 6a d
dm nh6021s ps document number: ds 37685 rev. 2 - 2 5 of 7 www.diodes.com june 2016 ? diodes incorporated dm nh6021s ps
dm nh6021s ps document number: ds 37685 rev. 2 - 2 6 of 7 www.diodes.com june 2016 ? diodes incorporated dm nh6021s ps package outline please see http://www.diodes.com/package - ou tlines.html for the latest version. powerdi5060 - 8 powerdi5060 - 8 dim min max typ a 0.90 1.10 1.00 a1 0.00 0.05 ? b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 d 5.15 bsc d1 4.70 5.10 4.90 d2 3.70 4.10 3.90 d3 3.90 4.30 4.10 e 6.15 bsc e1 5.60 6.00 5.80 e2 3.28 3.68 3.48 e3 3.99 4.39 4.19 e 1.27 bsc g 0.51 0.71 0.61 k 0.51 ? ? ? ? l 0.51 0.71 0.61 l1 0.100 0.200 0.175 m 3.235 4.035 3.635 m1 1.00 1.40 1.21 10 12 11 1 6 8 7 all dimensions in mm suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. powerdi5060 - 8 dimensions value (in mm) c 1.270 g 0.660 g1 0.820 x 0.610 x1 4.100 x2 0.755 x 3 4.420 x4 5.610 y 1.270 y1 0.600 y2 1.020 y3 0.295 y4 1.825 y5 3.810 y6 0.180 y7 6.610 d1 e1 a l k m l1 d2 g e2 detail a 0(4x) a1 c e d e 1 detail a b (8x) e/2 1 01 (4x) m1 b2 (4x) b3 (4x) e3 d3 y7 x3 y2 y5 x1 g1 x c y(4x) g x2 y3 y4 y6 x4 y1
dm nh6021s ps document number: ds 37685 rev. 2 - 2 7 of 7 www.diodes.com june 2016 ? diodes incorporated dm nh6021s ps important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to , the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, co rrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the application or use of this document or any product described herein; neither does diod es incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes inc orporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ize d sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, an d attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign pate nts pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s w ithout the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and wh ose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramificat ions of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critica l, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes.com
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